2SB1059 - Hitachi Semiconductor

2SB1059 PNP Transistor

2SB1059 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1059 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperat.

Features

turation voltage Gain bandwidth product Collector output capacitance Note: B 100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO hFE
* 100 — — — VCE(sat) fT Cob V MHz pF I C =
  –1 A, IB =
  –0.1 A VCE =
  –2 V, IC =
  –10 mA VCB =
  –10 V, IE = 0, f = 1 MHz 1. The 2SB1059 is grouped by hFE as follows. See characteristic curves of 2SB740. 2 2SB1059 Maximum Collector Dissipation Curve 1.2 Collector power dissipation PC (W) 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ We.