2SB1054 - INCHANGE

2SB1054 PNP Transistor

·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -1.

Features

3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V COB Output Capacitance IE= 0; VCE= -10V; ftest=1MHz fT Current-Gain—Bandwidth Product IC=-0.5A; VCE= -5V;ftest=1MHz  hFE-2 Classifications Q P 60-120 100-200 2SB1054 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 170 pF 20 MHz NOTICE： ISC reserves the rights to make changes of .