·With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1056 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitt.
gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 40 20 MIN 2SB1056 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 330 20 pF MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1056 Fig.2 Outline dimensions (unindi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1050 |
Panasonic Semiconductor |
PNP Transistor | |
2 | 2SB1051K |
Rohm |
Epitaxial Planer PNP Silicon Transistor | |
3 | 2SB1052 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1052 |
INCHANGE |
PNP Transistor | |
5 | 2SB1054 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SB1054 |
INCHANGE |
PNP Transistor | |
7 | 2SB1054 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB1055 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1057 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB1058 |
Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER | |
11 | 2SB1059 |
Hitachi Semiconductor |
PNP Transistor | |
12 | 2SB1000 |
Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER |