2SB1025 - Guangdong Kexin Industrial

2SB1025 Silicon PNP Transistor

www.DataSheet.co.kr SMD Type Silicon PNP Epitaxial 2SB1025 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; .

Features

Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature
*1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP
*1 PC
*2 Tj Tstg Rating -120 -80 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W
*2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown v.