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·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1413 APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB.
tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-25mA; IB=0 IC=-2A ;IB=-4mA IC=-2A ;IB=-4mA VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -40 -1.5 -2.0 -20 -2.5 TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC=-30V ,RL=10< 0.30 0.60 0.25 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACK.
2SB1023 - INCHANGE
·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A ·Goo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1020 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB1020A |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SB1021 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1021 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1022 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1022 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1024 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1024 |
Toshiba |
PNP Transistor |
|
| 9 | 2SB1024 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1025 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 11 | 2SB1025 |
Guangdong Kexin Industrial |
Silicon PNP Transistor |
|
| 12 | 2SB1026 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|