2SB1020 - INCHANGE

2SB1020 PNP Transistor

·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAX.

Features

herwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -14mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -3V hFE-2 DC Current Gain IC= -7A; VCE= -3V 2SB1020 MIN TYP. MAX UNIT -100 V -1.5 V -2.0 V -2.5 V -100 μA -4.0 mA 2000 15000 1000 NOT.