·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base.
e Breakdown Voltage IC= -0.5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.4A; VCE= -10V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.4A; VCE= -10V MIN TYP. MAX UNIT -150 V -200 V -5 V -1.0 V -1.0 V -50 μA -50 μA 60 200 hFE Classifications P Q 60-140 85-200 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA841 |
ETC |
Silicon PNP Transistor | |
2 | 2SA844 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
3 | 2SA844 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA844 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
5 | 2SA844 |
JCET |
PNP Transistor | |
6 | 2SA844 |
Renesas |
Silicon PNP Epitaxial Transistor | |
7 | 2SA844-C |
SeCoS |
PNP Plastic Encapsulated Transistor | |
8 | 2SA844-D |
SeCoS |
PNP Plastic Encapsulated Transistor | |
9 | 2SA844-E |
SeCoS |
PNP Plastic Encapsulated Transistor | |
10 | 2SA807 |
SavantIC |
Silicon POwer Transistors | |
11 | 2SA807 |
Inchange Semiconductor |
POWER TRANSISTOR | |
12 | 2SA808 |
SavantIC |
Silicon POwer Transistors |