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2SA807 |
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| Part Number | 2SA807 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
Switching times
MIN TYP. MAX UNIT
-60
V
-1.5 V
-1.0 mA
-1.0 mA
20
10
MHz
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 3Ω, VCC= -10V IB1= -0.3A; IB2= 50mA
1.2
μs
1.8
μs
0.3
μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ... |
| Document |
 2SA807 Data Sheet
PDF 195.95KB |
| Distributor | Stock | Price | Buy |
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