2SA636A - Inchange Semiconductor

2SA636A POWER TRANSISTOR

·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER C.

Features

SYMBOL PARAMETER CONDITIONS 2SA636 2SA636A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat ICBO Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 -0.8 -2.0 V μA μA Collector cut-off current -1 IEBO Emitter cut-off current VEB=-3V; IC=0 -1 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 250 COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.1A ; VCB=-5V 45 MHz ‹ hFE-2 classifications N M 50-100 L 80-160 K 120-250.