2SA634 - Inchange Semiconductor

2SA634 POWER TRANSISTOR

·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collect.

Features

itter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 250 ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA COB Output capacitance IE=0; VCB=-10V;f=1MHz 75 pF fT Transition frequency IC=-0.1A ; VCE=-5V 55 MHz ‹ hFE-2 Classifications N 40-60 M 50-100 L 80-160 K 120-250 2 Inchange Semic.