2SA633 - Inchange Semiconductor

2SA633 POWER TRANSISTOR

·With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cu.

Features

Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-0.1mA; IC=0 IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2 A B 2SA633 MIN -30 -5 TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -1 20 80 60 250 V V μA μA μA VCB=-20V; IE=0 VCE=-12V; IB=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA633 Fig.2 outline dime.