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DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • PACKAGE DIMENSION (in millimeters) _0.2 2.8+ 0.4 +0.1 –0.05 High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA 2 1.5 0.65 +0.1 –0.15 • 0.95 • • Equivalent NPN transistor is the 2.
•
PACKAGE DIMENSION (in millimeters)
_0.2 2.8+
0.4 +0.1
–0.05
High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
2
1.5
0.65 +0.1
–0.15
•
0.95
•
•
Equivalent NPN transistor is the 2SC3583.
_0.2 2.9+
High-speed switching characterstics
2
0.95
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg
Rating −20 −12 −3.0 −50 200 150 −65 to +150
Unit V V V mA mW °C °C
1.1 to 1.4 0.3
Marki.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1971 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1972 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SA1973 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1978 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SA1979 |
AUK corp |
PNP Silicon Transistor |
|
| 6 | 2SA1979M |
AUK corp |
PNP Silicon Transistor |
|
| 7 | 2SA1979S |
AUK corp |
PNP Silicon Transistor |
|
| 8 | 2SA1979S |
LZG |
SILICON PNP TRANSISTOR |
|
| 9 | 2SA1979S |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SA1979SF |
AUK corp |
PNP Silicon Transistor |
|
| 11 | 2SA1979U |
AUK corp |
PNP Silicon Transistor |
|
| 12 | 2SA1979UF |
AUK corp |
PNP Silicon Transistor |
|