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2SA1977 |
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| Part Number | 2SA1977 |
| Manufacturer | NEC |
| Description | DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • PACKAGE DIMENSION (in millimeters) _0.2 2.8+ 0.4 +0.1 –0.05 High fT fT ... |
| Features |
• PACKAGE DIMENSION (in millimeters) _0.2 2.8+ 0.4 +0.1 –0.05 High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA 2 1.5 0.65 +0.1 –0.15 • 0.95 • • Equivalent NPN transistor is the 2SC3583. _0.2 2.9+ High-speed switching characterstics 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg Rating −20 −12 −3.0 −50 200 150 −65 to +150 Unit V V V mA mW °C °C 1.1 to 1.4 0.3 Marki... |
| Document |
 2SA1977 Data Sheet
PDF 58.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1971 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1972 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SA1973 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1978 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SA1979 |
AUK corp |
PNP Silicon Transistor |
|