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www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation J.
he Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SA1972 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1971 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1973 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SA1977 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SA1978 |
NEC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SA1979 |
AUK corp |
PNP Silicon Transistor |
|
| 6 | 2SA1979M |
AUK corp |
PNP Silicon Transistor |
|
| 7 | 2SA1979S |
AUK corp |
PNP Silicon Transistor |
|
| 8 | 2SA1979S |
LZG |
SILICON PNP TRANSISTOR |
|
| 9 | 2SA1979S |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SA1979SF |
AUK corp |
PNP Silicon Transistor |
|
| 11 | 2SA1979U |
AUK corp |
PNP Silicon Transistor |
|
| 12 | 2SA1979UF |
AUK corp |
PNP Silicon Transistor |
|