TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications 2SA1939 Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Co.
priate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −80 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) .
·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 ·M.
·With TO-3P(I) package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1930 |
Toshiba Semiconductor |
PNP Transistor | |
2 | 2SA1930 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
3 | 2SA1930 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1930 |
LZG |
SILICON PNP TRANSISTOR | |
5 | 2SA1930I |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
6 | 2SA1930S |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
7 | 2SA1931 |
INCHANGE |
PNP Transistor | |
8 | 2SA1931 |
Toshiba |
Silicon PNP Transistor | |
9 | 2SA1932 |
INCHANGE |
PNP Transistor | |
10 | 2SA1932 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
11 | 2SA1933 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
12 | 2SA1934 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |