2SA1932 Silicon PNP Transistor Datasheet

2SA1932 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1932 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC5174 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCE.

Features

e appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE fT Cob VCB = −.

The same part from a different manufacturer

2SA1932 - INCHANGE

·High collector breakdown voltage ·Complementary to 2SC5174 ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro.

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2SA1932 - Toshiba Semiconductor