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2SA1939 |
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| Part Number | 2SA1939 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.0 V
VBE(on)
Base-Emitter On Voltage
IC= -3A; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-5 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
180
pF
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
30
MHz
hFE-1 Classifications R O 55-110 80-160 NOTICE： I... |
| Document |
 2SA1939 Data Sheet
PDF 221.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1930 |
Toshiba Semiconductor |
PNP Transistor |
|
| 2 | 2SA1930 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SA1930 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1930 |
LZG |
SILICON PNP TRANSISTOR |
|
| 5 | 2SA1930I |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|