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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm • High voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissi.
wing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SA1937 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1930 |
Toshiba Semiconductor |
PNP Transistor |
|
| 2 | 2SA1930 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SA1930 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1930 |
LZG |
SILICON PNP TRANSISTOR |
|
| 5 | 2SA1930I |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SA1930S |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SA1931 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SA1931 |
Toshiba |
Silicon PNP Transistor |
|
| 9 | 2SA1932 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SA1932 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 11 | 2SA1933 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 12 | 2SA1934 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|