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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1892 Power Amplifier Applications Power Switching Applications 2SA1892 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5.
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1892 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter s.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1890 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SA1891 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | 2SA1893 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | 2SA1896 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA1898 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1899 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 7 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 8 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 9 | 2SA1803 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 10 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SA1803 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SA1804 |
Toshiba Semiconductor |
TRANSISTOR |
|