2SA1802 - Toshiba Semiconductor

2SA1802 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications 2SA1802 Unit: mm · Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A) · Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA) · Com.

Features

-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = −20 V, IE = 0 VEB = −6 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −3 A IC = −3 A, IB = −60 mA VCE = −2 V, IC = −3 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Marking 2SA1802 Min Typ. Max Unit ― ― −100 nA ― ― −100 nA −10 ― ― V 200 ― 600 140 200 ― ― −0.25 −0.50 .