·With TO-3PFM package ·Complement to type 2SC4689 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PFM) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETE.
tter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-6A;IB=-0.6 A IC=-4A ; VCE=-5V VCB=-120V IE=0 MIN -120 2SA1804 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -2.0 -1.5 -5 -5 55 35 30 420 160 V V µA µA VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=10V;f=1MHz MHz pF hFE classifications R 55-110 O 80-160 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Po.
·With TO-3PML package ·Complement to type 2SC4689 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fid.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
3 | 2SA1803 |
Toshiba Semiconductor |
TRANSISTOR | |
4 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1803 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SA1805 |
Toshiba Semiconductor |
TRANSISTOR | |
7 | 2SA1805 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SA1805 |
Inchange Semiconductor |
Power Transistor | |
9 | 2SA1806 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
10 | 2SA1807 |
Rohm |
(2SA1807 / 2SA1862) High-Voltage Switching Transistor | |
11 | 2SA1810 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
12 | 2SA1811 |
Toshiba Semiconductor |
TRANSISTOR |