2SA1843 - Renesas

2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.

Features

a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High hFE and low VCE(sat): VCE(sat) ≤ −0.3 V @IC = −3.0 A, IB = −0.15 A hFE ≥ 100 @VCE = −2.0 V, IC = −1.0 A
• Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Pa.