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Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB (f=100MHz). · High cutoff frequency ; fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4432. Package Dimensions unit:mm 20.
· High power gain : PG=25dB (f=100MHz).
· High cutoff frequency ; fT=750MHz typ.
· Low collector-to-emitter saturation voltage.
· Complementary pair with the 2SC4432.
Package Dimensions
unit:mm 2018A
[2SA1815]
C : Collector B : Base E : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Conditions
SANYO : CP
Ratings
–15
–12
–3
–50 250 150
–55 to +150
Unit V V V mA
mW ˚C ˚.
2SA1815 - Guangdong Kexin Industrial
SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1815 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 www.DataShee.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1810 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA1811 |
Toshiba Semiconductor |
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|
| 3 | 2SA1812 |
Rohm |
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|
| 4 | 2SA1813 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA1814 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1816 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 7 | 2SA1818 |
Rohm |
1.2W PACKAGE POWER TAPED TRANSISTOR |
|
| 8 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 9 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 10 | 2SA1803 |
Toshiba Semiconductor |
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|
| 11 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1803 |
Inchange Semiconductor |
Power Transistor |
|