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Ordering number:EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation vo.
· Very small-sized package permitting 2SA1813-
applied sets to be made smaller and slimmer.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.3V).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2059A
[2SA1813]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tst.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1810 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SA1811 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SA1812 |
Rohm |
High-voltage Switching Transistor |
|
| 4 | 2SA1814 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA1815 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1815 |
Guangdong Kexin Industrial |
PNP Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA1816 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 8 | 2SA1818 |
Rohm |
1.2W PACKAGE POWER TAPED TRANSISTOR |
|
| 9 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 10 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 11 | 2SA1803 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR |
|