Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine.
q q q
0.4
0.8±0.1
0.4
0.2
–0.05 0.15
–0.05
+0.1
High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings
–15
–15
–4
–100
–50 125 125
–55 ~ +125 Unit V V V mA mA mW ˚C ˚C
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage tempera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
3 | 2SA1803 |
Toshiba Semiconductor |
TRANSISTOR | |
4 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1803 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SA1804 |
Toshiba Semiconductor |
TRANSISTOR | |
7 | 2SA1804 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SA1804 |
Inchange Semiconductor |
Power Transistor | |
9 | 2SA1805 |
Toshiba Semiconductor |
TRANSISTOR | |
10 | 2SA1805 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SA1805 |
Inchange Semiconductor |
Power Transistor | |
12 | 2SA1807 |
Rohm |
(2SA1807 / 2SA1862) High-Voltage Switching Transistor |