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www.DataSheet4U.com Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA1585S TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. BASE 123.
2. COLLECTOR Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless otherwise specified) Test conditions MIN -20 -20 -6 -0.1 .
2SA1585S - Rohm
Transistors 2SB1424 / 2SA1585S Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S zFeatures 1) Low VCE(sat). VCE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1585 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | 2SA1585 |
CHINA BASE |
PNP Silicon Epitaxial Planar Transistor |
|
| 3 | 2SA1585 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor |
|
| 4 | 2SA1585 |
JCET |
PNP Transistor |
|
| 5 | 2SA1585E |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|
| 6 | 2SA1585S-Q |
MCC |
PNP Plastic-Encapsulate Transistors |
|
| 7 | 2SA1585S-R |
MCC |
PNP Plastic-Encapsulate Transistors |
|
| 8 | 2SA1580 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1580 |
Kexin |
Transistor |
|
| 10 | 2SA1580 |
TY Semiconductor |
Transistor |
|
| 11 | 2SA1581 |
ETC |
Transistor |
|
| 12 | 2SA1582 |
Sanyo |
Silicon Transistor |
|
