MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1585S 2SA1585S-Q 2SA1585S-R PNP Plastic-Encapsulate Transistors • • • • Features Power dissipation: PD = 0.4W(Tamb=25ć) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -20V Operating a.
Power dissipation: PD = 0.4W(Tamb=25ć) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -20V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50A, IE=0) Collector-Base Voltage (IC=-1A, IB=0) Emitter-Base Voltage (IE=-50A, IC=0) Collector cut-off Current (VCB=-20V, IE=0) Emitter cut-off Current (VEB=-5V, IC=0) DC current gain (VCE=-2V, IC=-0.1A) Collector-Emitter Saturation Voltage (IC=-2A, IB=-0.1A) Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) Min -20 -20 -6.0 ----120 --200 Typ ----------------Max -------0.1 -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1585S-Q |
MCC |
PNP Plastic-Encapsulate Transistors | |
2 | 2SA1585S |
Rohm |
PNP Transistor | |
3 | 2SA1585S |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
4 | 2SA1585S |
MCC |
PNP Plastic-Encapsulate Transistors | |
5 | 2SA1585 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
6 | 2SA1585 |
CHINA BASE |
PNP Silicon Epitaxial Planar Transistor | |
7 | 2SA1585 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
8 | 2SA1585 |
JCET |
PNP Transistor | |
9 | 2SA1585E |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
10 | 2SA1580 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
11 | 2SA1580 |
Kexin |
Transistor | |
12 | 2SA1580 |
TY Semiconductor |
Transistor |