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2SA1585E - Jiangsu Changjiang Electronics

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2SA1585E TRANSISTOR

PNP Epitaxial planar type Silicon Transistor www.DataSheet4U.com FEATURES B 1. BASE 2. EMITTER 3. COLLECTOR E C Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:AEQ, AER, AES C BACK E B AEQ B E MAXIMUM.

Features

B 1. BASE 2. EMITTER 3. COLLECTOR E C Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:AEQ, AER, AES C BACK E B AEQ B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value -20 -20 -6 -2 150 150 -55-150 ℃ ℃ Units V V V A .

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