2SA1515S - Rohm

2SA1515S Medium Power Transistor

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1.

Features

1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858
Structure Epitaxial planar type PNP silicon transistor
Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1 3Min. +0.2 −0.1 4.0 −+ 0.3 (15Min.) 2.5 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2 0.4 0.1 1.5+− 0.1 0.4 +0.1 −0.05 5 0.45 +0.15 −0.05 2.5 +0.4 −0.1 (1) Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter ∗Abbreviated symbol: BA (1) (2) (3) ROHM : SPT EIAJ : SC-7.