Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=2.
q q q q
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C)
Ratings
–25
–20
–7
–1
– 0.5 300 150
–55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45
–0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.15
EIAJ:S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1510 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
2 | 2SA1511 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
3 | 2SA1511 |
Sanyo |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
4 | 2SA1513 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SA1513 |
Inchange Semiconductor |
POWER TRANSISTOR | |
6 | 2SA1514K |
Rohm |
High-voltage Amplifier Transistor | |
7 | 2SA1514K |
Kexin |
Transistor | |
8 | 2SA1515 |
Rohm |
Medium Power Transistor | |
9 | 2SA1515 |
SeCoS |
PNP Transistor | |
10 | 2SA1515S |
Rohm |
Medium Power Transistor | |
11 | 2SA1516 |
Toshiba Semiconductor |
SILICON PNP TRANSISTOR | |
12 | 2SA1516 |
SavantIC |
SILICON POWER TRANSISTOR |