·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.
ctor-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A; IB= -0.6A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A; IB= -0.6A -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A; VCE= -2V 100 400 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 300 pF fT Current-Gain—Bandwidth Product IC= -1.5A; VCE= -10V 80 MHz NOTICE: ISC reserves the rights .
·With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1510 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
2 | 2SA1511 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
3 | 2SA1511 |
Sanyo |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
4 | 2SA1512 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SA1514K |
Rohm |
High-voltage Amplifier Transistor | |
6 | 2SA1514K |
Kexin |
Transistor | |
7 | 2SA1515 |
Rohm |
Medium Power Transistor | |
8 | 2SA1515 |
SeCoS |
PNP Transistor | |
9 | 2SA1515S |
Rohm |
Medium Power Transistor | |
10 | 2SA1516 |
Toshiba Semiconductor |
SILICON PNP TRANSISTOR | |
11 | 2SA1516 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SA1516 |
Inchange Semiconductor |
POWER TRANSISTOR |