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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.
er Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 2SA1488 MIN TYP. MAX UNIT -60 V -0.5 V -100 μA -100 μA 40 90 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The pro.
2SA1488 - SavantIC
·With TO-220F package ·Complement to type 2SC3851/3851A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base C.
2SA1488 - Sanken electric
2SA1488/1488A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application : Audio and General P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1480 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SA1480 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 3 | 2SA1481 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1483 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 5 | 2SA1483 |
Kexin |
Transistor |
|
| 6 | 2SA1484 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SA1484 |
Kexin |
Transistor |
|
| 8 | 2SA1485 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SA1485 |
Renesas |
Silicon PNP Transistor |
|
| 10 | 2SA1486 |
NEC |
PNP SILICON POWER TRANSISTOR |
|
| 11 | 2SA1486 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SA1487 |
Panasonic |
Silicon PNP Transistor |
|