Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 20.
· High breakdown voltage (VCEO≥300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0 4.0
1.0 1.0
3.3
1.5 1.4
3.0 7.5 15.5 11.0
3.0
1.6 0.8
0.8 0.75 0.7
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current
Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
PC
Junction Temperature Storage Temp.
TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features ,,。 High breakdown voltage, small re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1481 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SA1483 |
Toshiba Semiconductor |
TRANSISTOR | |
3 | 2SA1483 |
Kexin |
Transistor | |
4 | 2SA1484 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
5 | 2SA1484 |
Kexin |
Transistor | |
6 | 2SA1485 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
7 | 2SA1485 |
Renesas |
Silicon PNP Transistor | |
8 | 2SA1486 |
NEC |
PNP SILICON POWER TRANSISTOR | |
9 | 2SA1486 |
INCHANGE |
PNP Transistor | |
10 | 2SA1487 |
Panasonic |
Silicon PNP Transistor | |
11 | 2SA1488 |
Sanken electric |
Silicon PNP Transistor | |
12 | 2SA1488 |
SavantIC |
SILICON POWER TRANSISTOR |