Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier 5.9± 0.2 Unit: mm 4.9± 0.2 q q High transition frequency fT. Small collector output capacitance Cob. +0.3 +0.2 2.54± 0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Co.
0.45
–0.1 1.27
+0.2
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCE =
–60V, IB = 0 IC =
–100µA, IE = 0 IC = 1mA, IB = 0 IE =
–100µA, IC = 0 VCE =
–5V, IC =
–10mA IC =
–10mA, IB =
–1mA VCB =
–5V, IE = 10mA, f = 200MHz VCB =
–10V, IE = 0, f = 1MHz 500 2.7
–85
–85
–4 60
– 0.5 V MHz pF min typ max
–10 Unit µA V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1480 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SA1480 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
3 | 2SA1481 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SA1483 |
Toshiba Semiconductor |
TRANSISTOR | |
5 | 2SA1483 |
Kexin |
Transistor | |
6 | 2SA1484 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
7 | 2SA1484 |
Kexin |
Transistor | |
8 | 2SA1485 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
9 | 2SA1485 |
Renesas |
Silicon PNP Transistor | |
10 | 2SA1486 |
NEC |
PNP SILICON POWER TRANSISTOR | |
11 | 2SA1486 |
INCHANGE |
PNP Transistor | |
12 | 2SA1488 |
Sanken electric |
Silicon PNP Transistor |