·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3297 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.
lector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -2.5A; VCE= -2V 2SA1305 MIN TYP. MAX UNIT -30 V -0.8 V -1.0 V -1.0 μA -1.0 μA 70 240 25 hFE-1 Classifications O Y 70-140 120-240 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a.
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA1305 POWER AMPLIFIER APPLICATIONS. CAR RADIO AND CAR STEREO OUTPUT STA.
·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1300 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
3 | 2SA1300 |
TRANSYS |
Plastic-Encapsulated Transistors | |
4 | 2SA1300 |
Dc Components |
PNP Transistor | |
5 | 2SA1300 |
SeCoS |
PNP Transistor | |
6 | 2SA1300 |
BLUECOLOUR |
PNP Silicon Epitaxial Planar Transistor | |
7 | 2SA1300 |
LZG |
SILION PNP TRANSISTOR | |
8 | 2SA1301 |
Toshiba |
Silicon PNP Transistor | |
9 | 2SA1301 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SA1301 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | 2SA1302 |
Toshiba |
Silicon PNP Transistor | |
12 | 2SA1302 |
Inchange Semiconductor |
Silicon PNP Power Transistor |