LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application : Audio and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO –150 VCEO –150 VEBO –5 IC –14 IB –3 PC 125(Tc=25°C) Tj 150 Tstg –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(B.
0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
–
–760000mmAA
I C
– V CE Characteristics (Typical)
–12
–
5
00
mA
–4
00
mA
–300mA
–200mA
–150mA
–100mA
–8
–50mA
–4
IB=
–20mA
0
0
–1
–2
–3
–4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t )
– I B Characteristics (Typical)
–3
I C
– V BE Temperature Characteristics (Typical)
(VCE=
–4V)
–14
–10
–2
Collector Current IC(A) 25˚C (12C5a˚sCe(TCeasmep)Temp)
–30˚C (Case Temp)
–1 IC=
–10A
–5A
0
0
–0.2
–0.4
–0.
·With TO-3PN package ·Complement to type 2SC3284 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collecto.
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 ·Mini.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1300 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
3 | 2SA1300 |
TRANSYS |
Plastic-Encapsulated Transistors | |
4 | 2SA1300 |
Dc Components |
PNP Transistor | |
5 | 2SA1300 |
SeCoS |
PNP Transistor | |
6 | 2SA1300 |
BLUECOLOUR |
PNP Silicon Epitaxial Planar Transistor | |
7 | 2SA1300 |
LZG |
SILION PNP TRANSISTOR | |
8 | 2SA1301 |
Toshiba |
Silicon PNP Transistor | |
9 | 2SA1301 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SA1301 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | 2SA1302 |
Toshiba |
Silicon PNP Transistor | |
12 | 2SA1302 |
Inchange Semiconductor |
Silicon PNP Power Transistor |