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SMD Type Power Amplifier Applications 2SA1202 Transistors Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Coll.
Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2882
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range
* Mounted on ceramic substrate (250 mm x 0.8 t)
2
Symbol VCBO VCEO VEBO IC IB PC PC
* Tj Tstg
Rating -80 -80 -5 -400 -80 500 1000 150 -55 to +150
Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Curre.
2SA1202 - Toshiba Semiconductor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Appli.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 6 | 2SA1201 |
UTC |
SILICON PNP EPITAXIAL TRANSISTOR |
|
| 7 | 2SA1201 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 8 | 2SA1201 |
SeCoS |
PNP Silicon Transistor |
|
| 9 | 2SA1201 |
Kexin |
Transistors |
|
| 10 | 2SA1201 |
TRANSYS |
Plastic-Encapsulate Transistors |
|
| 11 | 2SA1201-O |
MCC |
PNP Silicon Power Transistors |
|
| 12 | 2SA1201-Y |
MCC |
PNP Silicon Power Transistors |
|