2SA1202 |
Part Number | 2SA1202 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Applications 2SA1202 Unit: mm • Suitable for driver of 30 to 35 watts audio amplifi... |
Features |
ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
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2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown vo... |
Document |
2SA1202 Data Sheet
PDF 132.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR | |
2 | 2SA1200 |
Kexin |
PNP Transistors | |
3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors | |
5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |