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2SA1200 |
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| Part Number | 2SA1200 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) ... |
| Features |
ge Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO
VCB = −150 V, IE = 0 VEB = −5 V, IC = 0
hFE (Note 2)
VCE = −5 V, IC = −10 mA
VCE (sat) IC = −10 mA, IB = −1 mA
VBE VCE = −5 V, IC = −30 mA
fT VCE = −30 V, IC = −10 mA Cob VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 70 to 140, Y: 120 to 240
Marking
Type name hFE classification
BO
2SA1200
Min Typ. Max Unit
― ― −0.1 µA ― ― −0.1 µA
70 ― 240
―
― −0.8
V
―
― −0.9
V
― 120 ― MHz
― 4.0 5.0 pF
2 2002-08-19
Collector current IC (mA)
−50 −40 −30 −20 −10
0 0
IC – VCE −2 mA C... |
| Document |
 2SA1200 Data Sheet
PDF 112.20KB |
| Distributor | Stock | Price | Buy |
|---|
