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·With MT-200 package ·High power dissipations APPLICATIONS ·Audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter volt.
ff current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-0.5A ; VCE=-10V 55 35 50 MIN -150 -5 2SA1107 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V -2.0 -2.0 -10 -10 160 V V µA µA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1107 Fig.2 outline dimensions 3 .
2SA1107 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1103 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1103 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1104 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SA1104 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 7 | 2SA1105 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SA1105 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 9 | 2SA1106 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1106 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1108 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1108 |
Inchange Semiconductor |
POWER TRANSISTOR |
|