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·With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·For use in audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector.
llector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 µA hFE DC current gain IC=-3A ; VCE=4V 50 180 fT Transition frequency IE=1A ; VCE=-12V 20 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1104 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SA1104 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1103 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1103 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1105 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SA1105 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 7 | 2SA1106 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SA1106 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 9 | 2SA1107 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1107 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1108 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1108 |
Inchange Semiconductor |
POWER TRANSISTOR |
|