2SA1106 - Inchange Semiconductor

2SA1106 POWER TRANSISTOR

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SC2581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.

Features

tor-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V Switching Times tr Rise Time tstg Storage Time tf Fall Time IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V MIN TYP. MAX UNIT -140 V -2.0 V -100 μA -100 μA 30 20 MHz 0.3 μs 0.9 μs 0.2 μs Notice： ISC reserves the rights to make changes of the content herein the datashe.