2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Co.
800
–0.2 Min
–90
–90
–5 — — 250 — — — — — Typ Max — — — — — — — — — —
–0.1
–0.1 800
–0.2
2SA1085 Min Typ Max — — —
–0.1
–0.1 800
–0.2 V V Unit Test conditions V V V µA µA IC =
–10 µA, IE = 0 IC =
–1 mA, RBE = ∞ IE =
–10 µA, IC = 0 VCB =
–50 V, I E = 0 VEB =
–2 V, IC = 0 VCE =
–12 V, IC =
–2 mA IC =
–10 mA, IB =
–1 mA VCE =
–12 V, IC =
–2 mA
Typ — — — — — — —
–120 —
–120 —
–5 — — 250 — — — — — — — — — —
— — 250 — — — — —
DC current transfer ratio hFE
* Collector to emitter saturation voltage Base to emitter voltage
VCE(sat) VBE
–0.6 — 90 3.5 0.5 — — —
–0.6 — 90 3.5 0.5 — — —
–0.6 — 90 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1080 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | 2SA1081 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
3 | 2SA1082 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1082 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2SA1082 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
6 | 2SA1083 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
7 | 2SA1083 |
SeCoS |
PNP Transistor | |
8 | 2SA1085 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
9 | 2SA100 |
ETC |
Ge PNP Drift Transistor | |
10 | 2SA1001 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | 2SA1002 |
INCHANGE |
Silicon PNP Power Transistor | |
12 | 2SA1003 |
Inchange Semiconductor |
Silicon PNP Power Transistor |