2SA1080 - Inchange Semiconductor

2SA1080 Silicon PNP Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40.

Features

e IC= -0.1μA; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1μA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -10mA; IB= -1mA -1.0 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 nA ICEO Collector Cutoff Current VCE= -40V; IB= 0 -500 nA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 nA hFE DC Current Gain IC= -10mA; VCE= -5V 100 350 COB Outut Capacitance IE= 0; VCB= -20V; f= 1.0MHz 65 pF fT Current-Gain—Bandwidth Product IC= -10mA;VCE= -10V; f=10MHz 3.