·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collecto.
0mA ; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -2mA ; VCE= -12V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -2V; IC= 0 hFE DC Current Gain IC=-2mA ; VCE= -12V fT Current-Gain—Bandwidth Product IC= -2mA; VCE= -12V; f= 1MHz Cob Output Capacitance VCB = −10 V, IE = 0, f =1.0MHz MIN TYP . MAX UNIT -120 V -120 V -5 V -0.2 V -0.6 V -0.1 μA -0.1 μA 250 800 90 MHz 3.5 pF hFE Classifications D E 250-500 400-800 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif.
Elektronische Bauelemente 2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor FEATURES Low Frequency Amplifi.
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1080 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | 2SA1081 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
3 | 2SA1083 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1083 |
SeCoS |
PNP Transistor | |
5 | 2SA1084 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
6 | 2SA1085 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
7 | 2SA100 |
ETC |
Ge PNP Drift Transistor | |
8 | 2SA1001 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | 2SA1002 |
INCHANGE |
Silicon PNP Power Transistor | |
10 | 2SA1003 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | 2SA1006 |
NEC |
PNP/NPN TRANSISTOR | |
12 | 2SA1006 |
SavantIC |
Silicon POwer Transistors |