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2SA1082 - Inchange Semiconductor

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2SA1082 Silicon PNP Power Transistor

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collecto.

Features

0mA ; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -2mA ; VCE= -12V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -2V; IC= 0 hFE DC Current Gain IC=-2mA ; VCE= -12V fT Current-Gain—Bandwidth Product IC= -2mA; VCE= -12V; f= 1MHz Cob Output Capacitance VCB = −10 V, IE = 0, f =1.0MHz MIN TYP . MAX UNIT -120 V -120 V -5 V -0.2 V -0.6 V -0.1 μA -0.1 μA 250 800 90 MHz 3.5 pF  hFE Classifications D E 250-500 400-800 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif.

The same part from a different manufacturer

Datasheet 2SA1082 - SeCoS 2SA1082

Elektronische Bauelemente 2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor FEATURES  Low Frequency Amplifi.

Datasheet 2SA1082 - Hitachi Semiconductor 2SA1082

2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396.

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