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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -5V ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A; VCE= -5V hFE-2 DC Current Gain IC= -10A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V hFE-2 Classifications R Q P O 40-80 60-120 90-180 140-280 2SA1065 MIN TYP. MAX UNIT -150 V -2.0 V -2.5 V -1 mA -2 mA 40 280 30 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet .
2SA1065 - SavantIC
·With TO-3 package ·Low collector saturation voltage ·High transition frequency ·Complement to type 2SC2489 APPLICATIONS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1060 |
Panasonic Semiconductor |
Transistor |
|
| 2 | 2SA1060 |
SavantIC |
Silicon POwer Transistors |
|
| 3 | 2SA1060 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1061 |
Panasonic Semiconductor |
TRANSISTOR |
|
| 5 | 2SA1061 |
SavantIC |
Silicon POwer Transistors |
|
| 6 | 2SA1061 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SA1062 |
Panasonic Semiconductor |
TRANSISTOR |
|
| 8 | 2SA1062 |
SavantIC |
Silicon POwer Transistors |
|
| 9 | 2SA1062 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1063 |
SavantIC |
Silicon POwer Transistors |
|
| 11 | 2SA1063 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 12 | 2SA1064 |
SavantIC |
Silicon POwer Transistors |
|