·With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC.
er saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-8A ;IB=-0.8A IC=-8A;VCE=-5V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V 40 20 MIN -150 2SA1064 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -2.0 -2.5 -1 -2 280 V V mA mA 50 MHz hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLIN.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Compl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1060 |
Panasonic Semiconductor |
Transistor | |
2 | 2SA1060 |
SavantIC |
Silicon POwer Transistors | |
3 | 2SA1060 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA1061 |
Panasonic Semiconductor |
TRANSISTOR | |
5 | 2SA1061 |
SavantIC |
Silicon POwer Transistors | |
6 | 2SA1061 |
INCHANGE |
PNP Transistor | |
7 | 2SA1062 |
Panasonic Semiconductor |
TRANSISTOR | |
8 | 2SA1062 |
SavantIC |
Silicon POwer Transistors | |
9 | 2SA1062 |
Inchange Semiconductor |
POWER TRANSISTOR | |
10 | 2SA1063 |
SavantIC |
Silicon POwer Transistors | |
11 | 2SA1063 |
Inchange Semiconductor |
POWER TRANSISTOR | |
12 | 2SA1065 |
SavantIC |
Silicon POwer Transistors |