Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation ·Complement to Type 2SC2486 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba.
llector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -5V ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -0.02A; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V MIN TYP. MAX UNIT -120 V -2.0 V -1.8 V -50 μA -50 μA 20 40 220 20 20 MHz hFE-2 Classifications R Q P 40-80 60-120 100-220 Notice： ISC reserves the rights to make changes of the content h.
2SA1062 - SavantIC
With TO-3PN package ·Complement to type 2SC2486 ·High collector power dissipation APPLICATIONS ·High power audio frequen.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1060 |
Panasonic Semiconductor |
Transistor |
|
| 2 | 2SA1060 |
SavantIC |
Silicon POwer Transistors |
|
| 3 | 2SA1060 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1061 |
Panasonic Semiconductor |
TRANSISTOR |
|
| 5 | 2SA1061 |
SavantIC |
Silicon POwer Transistors |
|
| 6 | 2SA1061 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SA1063 |
SavantIC |
Silicon POwer Transistors |
|
| 8 | 2SA1063 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 9 | 2SA1064 |
SavantIC |
Silicon POwer Transistors |
|
| 10 | 2SA1064 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1065 |
SavantIC |
Silicon POwer Transistors |
|
| 12 | 2SA1065 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
