2SA1051 - Inchange Semiconductor

2SA1051 POWER TRANSISTOR

·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base .

Features

Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A; IB= -0.75A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V  hFE Classifications R O Y 55-110 80-160 120-240 2SA1051 MIN TYP. MAX UNIT -150 V -150 V -5 V -2.0 V -10 μA -10 μA 55 240 60 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information .