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·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2.
rwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SA1006 2SA1006A 2SA1006B CONDITIONS IC=-0.5A; IB=-50mA IC=-0.5A ;IB=-50mA VCB=-150V ;IE=0 VEB=-3V; IC=0 IC=-5mA ; VCE=-5V IC=-150mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V MIN TYP. MAX -1.0 -1.5 -1 -1 UNIT V V µA µA 30 60 45 80 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 SavantIC Semicond.
2SA1006A - INCHANGE
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1006 |
NEC |
PNP/NPN TRANSISTOR |
|
| 2 | 2SA1006 |
SavantIC |
Silicon POwer Transistors |
|
| 3 | 2SA1006B |
NEC |
PNP/NPN TRANSISTOR |
|
| 4 | 2SA1006B |
INCHANGE |
PNP Transistor |
|
| 5 | 2SA1006B |
SavantIC |
Silicon POwer Transistors |
|
| 6 | 2SA100 |
ETC |
Ge PNP Drift Transistor |
|
| 7 | 2SA1001 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SA1002 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 9 | 2SA1003 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | 2SA1007 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | 2SA1008 |
SavantIC |
Silicon POwer Transistors |
|
| 12 | 2SA1008 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
